| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98caefcd61c8f7598cb521a743ecdd1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dcdc0639606b1fff21825c1a6129db3a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c7f7b62d8bff453209a2312dfef73b07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a8f4b6b9aa0ed460f92c152085e72b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c95aaec47f0b103f642b4b799b6f14cd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2017-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_939e7d150711abdfa8f4ae6af04f98c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8dd3f9cd83f8cf8fc33dd2a84d8a385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cf57fb6581dbeee0a5b29398f581cda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_971b830b20f917ae3495581cd69fc6a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83926c87aba48e731cdd08c1938d9945 |
| publicationDate |
2018-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018236354-A1 |
| titleOfInvention |
METALLIC SPACER APPROACHES FOR CONDUCTIVE INTERCONNECTION AND MANUFACTURING AND STRUCTURES OBTAINED THEREFROM |
| abstract |
The invention relates to metal spacer based approaches for conductive interconnection and through fabrication. In one example, an integrated circuit structure comprises a plurality of alternating first and second conductive lines along the same direction of a back end line metallization layer (BEOL) in an inter-layer dielectric structure (ILD). ) above a substrate. Each of the plurality of alternating first and second conductive lines is recessed relative to an upper surface of the ILD structure. The ILD structure comprises a plurality of first and second ILD lines alternating with the first and second alternating conductive lines. A first hard mask component is on and aligned with the first conductive lines. A second hard mask component is on and aligned with the second conductive lines. A conductive via is in an opening in the first hard mask component and on one of the first conductive lines. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4202989-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3843130-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115241221-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115241221-A |
| priorityDate |
2017-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |