| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8205ec6ee1cd95eb60a03826535bad97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3424
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D165-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G10-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L61-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-12 |
| filingDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1583171c96e69dd71dd78a7275efc5d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a6340b2d48c7f6075ab2e89f3b8dc57 |
| publicationDate |
2018-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018235949-A1 |
| titleOfInvention |
Resist underlayer film forming composition having improved planarization |
| abstract |
[Problem] Implementing a method comprising a step of applying to an upper surface of a semiconductor substrate having a terraced portion and a non-terraced portion to produce an underlayer resist film, thereby to reduce by at least 5 nm the iso-dense polarization (inverse hump) between the terrace portion and the non-terraced portion of the backing film underlayment. [Solution] Implement a method for reducing iso-dense polarization in a backing film underlay. The method comprises: adding (C) a fluorinated surfactant to an underlayer resist film forming composition containing (A) a polymer and (D) a solvent; and applying the composition containing the fluorinated surfactant (C) to an upper surface of a semiconductor substrate having a terraced portion and a non-terraced portion. The method makes it possible to reduce at least 5 nm the iso-dense polarization (reverse hump) in the undercoat stock film having the terraced portion and the non-terraced portion. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10394124-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7349887-B2 |
| priorityDate |
2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |