http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018211368-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2018-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbc08ddc6d66d2b1382be7470af1e3cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5c12387c380b082acfe1c5c3a847b76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0a77ffc22328298fb7190ebe0dee35 |
| publicationDate | 2018-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2018211368-A1 |
| titleOfInvention | Semiconductor device and method of manufacturing semiconductor device |
| abstract | The present invention provides a semiconductor device capable of achieving good electric properties and high integration. This semiconductor device has an oxide in a channel formation region, and is provided with a transistor and a wiring, wherein the transistor has: an oxide on a first insulator; a second insulator on the oxide; a first conductor on the second insulator; a third insulator on the first conductor; a fourth insulator in contact with the second insulator, the first conductor, and the third insulator; and a fifth insulator in contact with the fourth insulator. The oxide has: a first region overlapping the second insulator; a second region overlapping the fourth insulator; and a third region in contact with the second region, wherein the third region has an oxygen concentration which is lower than those of the first region and second region, and the second region has an oxygen concentration which is lower than that of the first region. The wiring is in contact with the fifth insulator, and electrically connected to the third region. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021090115-A1 |
| priorityDate | 2017-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 92.