http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018205741-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b02fb4923b61a06d4b0c40ec8dd01d2 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-005 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-26 |
filingDate | 2018-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ac0399632b56215580474a3d8d34945 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ba12693d9ead670ffd99d550ca46a32 |
publicationDate | 2018-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | WO-2018205741-A1 |
titleOfInvention | Quantum dot light-emitting diode and preparation method therefor |
abstract | Disclosed are a quantum dot light-emitting diode and a preparation method therefor. The quantum dot light-emitting diode comprises a substrate, a bottom electrode, a light-emitting functional layer and a top electrode which are arranged in sequence. An outer surface of a functional layer composed of the bottom electrode, the light-emitting functional layer and the top electrode is provided with a first protective layer. The first protective layer is made of a fluorine-containing acrylate copolymer, is hydrophobic, and has good light transmittance, flexibility and heat dissipation. Moisture and oxygen can be effectively prevented from penetrating into the internal structure of the quantum dot light-emitting diode, thus providing a good protection effect. At the same time, when working, the quantum dot light-emitting diode can dissipate heat in a timely manner, which facilitates the performance of the device being better maximized, the light-emitting efficiency being improved, and the service life being prolonged. |
priorityDate | 2017-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.