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filingDate 2018-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15fea1f306a67a8406d29abb89f0f273
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publicationDate 2018-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2018200920-A1
titleOfInvention Glass electrochemical sensor with wafer level stacking and through glass via (tgv) interconnects
abstract A method of forming a glass electrochemical sensor is described. In some embodiments, the method may include forming a plurality of electrical through glass vias (TGVs) in an electrode substrate; filling each of the plurality of electrical TGVs with an electrode material; forming a plurality of contact TGVs in the electrode substrate; filling each of the plurality of contact TGVs with a conductive material; patterning the conductive material to connect the electrical TGVs with the contact TGVs; forming a cavity in a first glass layer; and bonding a first side of the first glass layer to the electrode substrate.
priorityDate 2017-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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