http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018198121-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdaa64756184e715af6cb25ebc318917 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N52-101 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06N10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N52-80 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06N99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-04 |
| filingDate | 2018-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c8f947ed1ded33debac978c832c6a96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfb5b7aec443fcda22d412e024ac3292 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e916f51f940b1a3a7d2bd61322f7a30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd25e4664e828cde228849bb0902994e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_092974020c0e5b95730476bb31d70094 |
| publicationDate | 2018-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2018198121-A1 |
| titleOfInvention | Quantum hall edge-mode device with multiple 2-dimensional electron gasesthat are coupled electrostatically |
| abstract | A device for quantum computers having two or more parallel electronic layers, each containing a 2-dimensional electron gas (2DEG) in the quantum Hall effect. The layers contain different filling factors supporting different configurations of quantum Hall effect edge states. The device has multiple adjacent regions, each covered by a top gate above the layers, which allows filling factors in each region to be configured such that in the interface between two regions two edge states are juxtaposed, which counter- propagate in the juxtaposed region. This is made possible by controlling the voltage on the electrodes to increase the filling factor of one layer and decrease that of another layer without requiring separate magnetic fields for different regions. Controlling the filling factors in each region, configures the spins of counter-propagating edge states to be either opposite or aligned. Both integer, fractional, and mixed integer-fractional quantum Hall effect edge states are supported. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110061124-A |
| priorityDate | 2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.