Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_716ced455c5edbe3e93066825dc8d4ef |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-498 |
filingDate |
2018-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc85376a5946245a4a1bdf1ae9c9551e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beb7785c9972bce1411a7e73a4ee0d99 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf2bed0c890b5bcc453774a7c67c3071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_097f0241c929a26babdee2d20689734e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_107d4e90620aff79ba3dcb0a2d6bd679 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3930f7c534b30091d5fb4986357dcb04 |
publicationDate |
2018-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2018187431-A1 |
titleOfInvention |
Fully self-aligned via |
abstract |
A first metallization layer comprising a set of first conductive lines that extend along a first direction on a first insulating layer on a substrate. A second insulating layer is on the first insulating layer. A second metallization layer comprises a set of second conductive lines on a third insulating layer and on the second insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. A via between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10892183-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3534395-A1 |
priorityDate |
2017-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |