| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ab054d4fd1810c2c2350c52d00de0add |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0071 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2018-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c46d4b3d71604831cffe1cdba47108d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c3269b85916032080220bcdc1eec4e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01661aae1af1dfe4546311baf5ad9c7e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a3616dadea64b64518e0c58ab64865d |
| publicationDate |
2018-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018185481-A1 |
| titleOfInvention |
Memory devices formed from correlated electron materials |
| abstract |
The present techniques generally relate to devices, such as conducting elements, which operate to place correlated electron switch elements into first and second impedance states. In embodiments, conducting elements are maintained to be at least partially closed continuously during first and second phases of coupling the CES elements between a common source voltage and a corresponding bitline. |
| priorityDate |
2017-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |