| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82720f0fe09c6d788db8fde9be2350dc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-0073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-52 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2018-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38fc12666f897c556633b45d7aeb9efa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94b6bfdb6c71e91f27731b823d0c9d52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cb0672f9ca9c30428089cbaee10c47f |
| publicationDate |
2018-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018178720-A1 |
| titleOfInvention |
A switching resistor and method of making such a device |
| abstract |
A switching resistor has a low resistance state and a high resistance state. The switching resistor comprises a dielectric layer disposed between a first electrode and a second electrode. The switching resistor further comprises a textured boundary surface between the first electrode and the dielectric layer. The textured boundary surface promotes the formation of a conductive pathway in the dielectric layer between the first electrode and the second electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437100-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004506-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11423984-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11430516-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021207224-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031551-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11450384-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11430517-B2 |
| priorityDate |
2017-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |