| abstract |
Described herein are qubit devices having one or more Josephson Junctions which include hexagonal boron nitride (hBN) as a tunnel barrier layer provided between a base electrode layer and a top electrode layer of each Josephson Junction, as well as methods for fabricating such devices. Because hBN is a two-dimensional (2D) material, tunnel barrier thickness can be accurately and reliably controlled, resulting in less variations between different Josephson Junctions. Due to the 2D nature of hBN, all bonds may be directed in the plane of the tunnel barrier layer and no dangling bonds may be left to interact and degrade the neighboring base and top electrodes. Furthermore, hBN can act as a diffusion batter and is a non-reactive material, thus enabling increased stability of the junction to thermal processing that would otherwise degrade a typical junction. |