| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85e817bdb7e7a5a6058f0ee1c1043c91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_912c2e9db3eb6de90ccbe26f35e34fe9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da1f1d2a74f33228972a7fb6d948cc78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0d74e9d45d20e0b7bac7c1b110f4383 |
| publicationDate |
2018-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018154823-A1 |
| titleOfInvention |
Substrate processing device, method of manufacturing semiconductor device, and program |
| abstract |
Provided is a technique for improving film thickness uniformity within the plane of a film formed on a wafer. A device comprises: a processing chamber for processing a substrate; a process gas nozzle which supplies a process gas to the processing chamber; an inert gas nozzle which supplies only inert gas into the processing chamber in such a way that the inert gas concentration at a central portion of the substrate is lower than the inert gas concentration at an end portion of the substrate; and an exhaust tube for exhausting the atmosphere in the processing chamber. An angle between the process gas nozzle and the inert gas nozzle, measured at the center of the substrate, is preferably an obtuse angle. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11170995-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7016833-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220110802-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020188237-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7055219-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022081773-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7256926-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021186677-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020090161-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2020090161-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112655078-A |
| priorityDate |
2017-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |