http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018143611-A1

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filingDate 2018-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_354bfc244b2616e2d38f884c86883c3a
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publicationDate 2018-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2018143611-A1
titleOfInvention Method for manufacturing large-area metal chalcogenide thin film, and method for manufacturing electronic device comprising metal chalcogenide thin film manufactured thereby
abstract The present invention relates to a method for manufacturing a large-area metal chalcogenide thin film and a device comprising the large-area metal chalcogenide thin film manufactured thereby, the method comprising the steps of: preparing a polymer-precursor solution; coating a substrate with the polymer-precursor solution; and heat-treating the substrate coated with the polymer-precursor solution. A high-quality, large-area metal chalcogenide thin film having a uniform thickness and composition can be manufactured at low cost according to the manufacturing method of the present invention.
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