http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018142239-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
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filingDate 2018-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
publicationDate 2018-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2018142239-A1
titleOfInvention Semiconductor device
abstract Provided is a semiconductor device having excellent electrical characteristics. The semiconductor device has a transistor comprising: a first conductor on a substrate; a first insulator on the first conductor; an oxide on the first insulator; a second insulator on the oxide; a second conductor on the second insulator; a third insulator on the second conductor; a fourth insulator on the third insulator; a fifth insulator disposed in contact with a side surface of the second insulator, a side surface of the second conductor, and a side surface of the third insulator; and a sixth insulator disposed in contact with the oxide, the first insulator, the fourth insulator, and the fifth insulator. The first insulator and the sixth insulator are in contact in a side peripheral region of the oxide. In environments of -40℃ to 85℃, inclusive, the transistor has an operating frequency of at least 0.5GHz and a data retention time of at least 0.5 years at a channel length and channel width size of 7-70nm.
priorityDate 2017-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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