| abstract |
Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: L 2 -M-C 4 AR 3 -3-[(ER 2 ) m -(ER 2 ) n -L']-, L 2 -M-(C 3 ( m -A 2 )R2-4-[(ER 2 ) m - (ER 2 ) n -L']-, L 2 -M-(C 5 AR 4 -4-[(ER 2 ) m -(ER 2)n -L'], and L 2 -M-(C 4 ( m - A 2 )R 3 -4-[(ER 2 ) m -(ER 2 ) n -L']-, wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m + n >1; each R is independently a H or a C 1 -C 4 hydrocarbon group; each L is independently a -1 anionic ligand selected from the group consisting of NR' 2 , OR', Cp, amidinate, β- diketonate, or keto-iminate, wherein R' is a H or a C 1 -C 4 hydrocarbon group; and L' is NR" or O, wherein R' is a H or a C 1 -C 4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes. |