| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95cecca1d54084f37adb3a316865bcbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e4fc5d2791e55effe5ff1c1314de16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_982c205eb01a067f7ee244db2d04bbf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_30c77281454ea02e7bfd7ea1bcf1ae81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ba1cce1030ed288aa4a101cf9c84ea0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60ada51d0d02d21a15bd474576f31b24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36e8b48c1e302ba06c6a2bbcf06ee42e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
| filingDate |
2016-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1f45c72afa162577e6fb6d7bad63f88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef5084fbe6bbe125e9bb02b9fcb5ea71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04d573f8aa91272d77493594b50e047a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab80bf649746bf79f4bff3d958f05c15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a86c883f3f463c83cf54727a8bc80124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8eef04a1b758cf6ed9b39f0881a72bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fd6c574a9c007010018488a57bc4bf6 |
| publicationDate |
2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018118089-A1 |
| titleOfInvention |
Differentiated molecular domains for selective hardmask fabrication and structures resulting therefrom |
| abstract |
Selective hardmask-based approaches for conductive via fabrication are described. In an example, an integrated circuit structure includes a plurality of conductive lines in an inter-layer dielectric (ILD) layer above a substrate. The plurality of conductive lines includes alternating non-recessed conductive lines and recessed conductive lines. The non-recessed conductive lines are substantially co-planar with the ILD layer, and the recessed conductive lines are recessed relative to an uppermost surface of the ILD layer. A dielectric capping layer is in recess regions above the recessed conductive lines. A hardmask layer is over the non-recessed conductive lines but not over the dielectric capping layer of the recessed conductive lines. The hardmask layer differs in composition from the dielectric capping layer. A conductive via is in an opening in the dielectric capping layer and on one of the recessed conductive lines. A portion of the conductive via is on a portion of the hardmask layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10832947-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3787006-A1 |
| priorityDate |
2016-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |