| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0120933550ea729b9f3186c3772531b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-4025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02438
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02415
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02251 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B27-0955
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B27-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-509 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-0683 |
| filingDate |
2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3882b25144f2a1d056f554f5811f74c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0f638e7451a87005b48ff2cfa537d09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6e0aa471bfcb73e5fd5c43d46f52fb3 |
| publicationDate |
2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018117076-A1 |
| titleOfInvention |
Semiconductor laser module |
| abstract |
A semiconductor laser module comprising: a semiconductor laser element; a semiconductor optical amplifier having laser light, that has been emitted from the semiconductor laser element, incident thereto and amplifying the incident laser light; and a first light-receiving element that measures the intensity of some of the laser light in order to monitor the wavelength of the laser light emitted from the semiconductor laser element. The semiconductor optical amplifier is arranged further to the rear than the light-receiving surface of the first light-receiving element. As a result, stray light reaching the light-receiving element for monitoring the laser light emitted from the semiconductor laser element is reduced. |
| priorityDate |
2016-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |