| abstract |
The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process for producing an inorganic silicon-containing film comprising depositing the compound of general formula (I) onto a solid substrate, wherein R 1 , R 2 , R 3 and R 4 are an alkyl group, an alkenyl group, an aryl group, a silyl group, or an amine group, and wherein at least one of R 1 and R 2 and at least one of R 3 and R 4 is a branched group containing at least five non-hydrogen atoms and wherein not more than one of R 1 and R 2 and not more than one of R 3 and R 4 is an amine group. |