| abstract |
Provided are: a field effect transistor wherein a semiconductor solution is able to be uniformly applied, the hysteresis is reduced, and the cracking resistance of a gate insulating layer is improved; and a production method of this field effect transistor, which exhibits excellent productivity. The present invention is a field effect transistor which is provided with at least a substrate, a source electrode, a drain electrode, a gate electrode, a semiconductor layer that is in contact with the source electrode and the drain electrode, and a gate insulating layer that insulates the semiconductor layer from the gate electrode, and which is characterized in that the gate insulating layer contains at least a polysiloxane that has a structural unit represented by general formula (1).n(In general formula (1), A 1 represents an organic group which has at least two groups selected from among a carboxyl group, a sulfo group, a thiol group, a phenolic hydroxyl group and derivatives of these groups, or alternatively at least one group selected from among functional groups wherein the above-mentioned groups are fused into a ring shape within the A 1 moiety and derivatives thereof.) |