| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-042 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2017-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9a4cb771e034a9fb616de92ee962c64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7336aa4b642f23bfe109f0d84e4fae1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4be913971e0d254981743b40f085cbb4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_569ed710566f95fb4f3561feb1891d7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b61d754bb24619dbb04a2e2cd8d48d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebd13a0a3fb6994c7c8e5822d2351c62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3478a0f3dbb1f94644f7728cda48ec0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e020002c852ba283603df5090dc71d3d |
| publicationDate |
2018-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018094000-A1 |
| titleOfInvention |
Methods for depositing amorphous silicon layers or silicon oxycarbide layers via physical vapor deposition |
| abstract |
In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer. |
| priorityDate |
2016-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |