| abstract |
Provided are: a cleaning solution that is used, inter alia, for removal of residue of a photoresist pattern or etching residue, wherein the cleaning solution has exceptional anticorrosion properties with respect to silicon nitride; and a method for cleaning a substrate using said cleaning solution. In a cleaning solution containing a hydrofluoric acid (A) and a solvent (S), a polymer that includes units derived from a compound of a specific structure having a carboxylic acid amide bond (–CO–N<) and an unsaturated double bond is blended as an anticorrosive agent (B). Polyvinylpyrrolidone is preferred as the polymer used as the anticorrosive agent (B). |