| abstract |
This light emitting element is provided with a laminated structure 20 formed of a GaN compound semiconductor, said laminated structure having laminated therein: a first compound semiconductor layer 21 having a first surface 21a, and a second surface 21b on the reverse side of the first surface 21a; an active layer 23 facing the second surface 21b of the first compound semiconductor layer 21; and a second compound semiconductor layer 22, which has a first surface 22a facing the active layer 23, and a second surface 22b on the reverse side of the first surface 22a. The light emitting element is also provided with: a first light reflecting layer 41 disposed on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflecting layer 42 disposed on the second surface 22b side of the second compound semiconductor layer 22. The first light reflecting layer 41 has a concave mirror section 43, and the second light reflecting layer 42 has a flat shape. |