| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2914b0941c351ffe57badc3c24589df7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M50-574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M50-574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate |
2017-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_519a64921e9133be8c4402d50ebf3919 |
| publicationDate |
2018-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018079950-A1 |
| titleOfInvention |
Bidirectional transistor and leakage current breaker using same |
| abstract |
The present invention relates to a bidirectional transistor and a leakage current breaker using the same. The bidirectional transistor comprises: a substrate; a gate electrode formed on the substrate; a gate insulating film made of a SiOC thin-film formed on the substrate and the gate electrode; and a source electrode portion and a drain electrode portion which are formed on the gate insulating film so as to be spaced apart from each other, wherein the source electrode portion and the drain electrode portion are configured such that a source representative electrode and a drain representative electrode are disposed on the gate insulating film and on the left and right of the gate electrode, and a plurality of source sub-electrodes and drain sub-electrodes are alternately and repeatedly arranged between the source representative electrode and the drain representative electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102014313-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023058783-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190000222-A |
| priorityDate |
2016-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |