| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5231c81de1a546c1d6a9325c10910ce |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6622 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2017-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f0605014dc85b3c0adf5b5c0ee0131f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04a5165be818ec98eb393ac94e45b497 |
| publicationDate |
2018-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018075099-A1 |
| titleOfInvention |
Coaxial connector feed-through for multi-level interconnected semiconductor wafers |
| abstract |
A semiconductor, silicon-on-oxide (SOI) structure having a silicon layer disposed on a bottom oxide (BOX) insulating layer. A deep trench isolation (DTI) material passes vertically through the silicon layer to the bottom oxide insulating layer. The deep trench isolation material has a lower permittivity than the permittivity of the silicon. A coaxial transmission line having an inner electrical conductor and an outer electrically conductive shield structure disposed around the inner electrical conductor passing vertically through the deep trench isolation material to electrically connect electrical conductors disposed over the bottom oxide insulating layer to electrical conductors disposed under the contacts bottom oxide insulating layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020262629-A1 |
| priorityDate |
2016-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |