Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C317-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G63-6886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C235-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C233-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C233-43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G59-52 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C317-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C235-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C233-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C233-43 |
filingDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f29db30447aefca2ecb4d274be528668 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_177d98018893f6055bad7c344e1c7556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0666762a4e064aeb8f5dd1b8869f7622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc6a19055ab71bfe7066169b927fae8b |
publicationDate |
2018-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2018070303-A1 |
titleOfInvention |
Resist underlayer film-forming composition comprising amide group-containing polyester |
abstract |
Provided is a resist underlayer film-forming composition which is capable of providing a resist underlayer film, said resist underlayer film exerting a sufficient anti-reflection function particularly in a KrF process, a high solvent resistance and a high dry etching speed, and enables the formation of a photoresist pattern having a good cross-sectional shape. The resist underlayer film-forming composition comprises a copolymer which contains: structural unit (A) derived from a diepoxy compound; and structural unit (B) derived from a compound represented by formula (1) [wherein: A represents a benzene ring or a cyclohexane ring; X represents a hydrogen atom, an alkyl or alkoxy group having 1 to 10 carbon atoms and optionally substituted by a halogen atom, or an alkoxycarbonyl group having 2 to 11 carbon atoms; and Y represents -COOH or -L-NHCO-Z-COOH (wherein: Z represents an alkylene group having 3 to 10 carbon atoms and optionally substituted by an oxygen atom, a sulfur atom or a nitrogen atom; and L represents a single bond or a spacer)]. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7046140-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021063982-A |
priorityDate |
2016-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |