| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fc0025682c8adb27c90d36fb33f1e1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99097abe9004a1524feacebaa6ddca4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8f669b22612d950a2e1bea3b64867b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e09485f7c1907393b48938dc7b6d297
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_510bed3755984b20f0eb57be81dde6b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec96f9d08c379c7e01d802eefc51ca10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db394def96c13b186f9a579e11aeda6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74addc67857f38a714d4375c814fb737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_543176f15c088c1b547867353d7c2bff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_217d5b464ee128c1d2c67dea2fa63fa8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31dc8f00e07c8b88b442d4adccea4082 |
| publicationDate |
2018-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018063194-A1 |
| titleOfInvention |
Systems, methods and devices for isolation for subfin leakage |
| abstract |
A subfin leakage problem with respect to the silicon-germanium (SiGe)/shallow trench isolation (STI) interface can be mitigated with a halo implant. A halo implant is used to form a highly resistive layer. For example, a silicon substrate layer 204 is coupled to a SiGe layer, which is coupled to a germanium (Ge) layer. A gate is disposed on the Ge layer. An implant is implanted in the Ge layer that causes the layer to become more resistive. However, an area does not receive the implant due to being protected (or covered) by the gate. The area remains less resistive than the remainder of the Ge layer. In some embodiments, the resistive area of a Ge layer can be etched and/or an undercuttage (etch undercut or EUC) can be performed to expose the unimplanted Ge area of the Ge layer. |
| priorityDate |
2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |