| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a62555ff12316a9a118542896b4c0af7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 |
| filingDate |
2017-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da20e44b499fa558b7cbb216f4c7613e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee6eb8d585a0096dd351b52021aa7d13 |
| publicationDate |
2018-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018045822-A1 |
| titleOfInvention |
Array substrate, and manufacturing method therefor and display device thereof |
| abstract |
Disclosed are an array substrate, a manufacturing method therefor and a display device thereof, relating to the technical field of displays. The manufacturing method for the array substrate comprises: forming a first active layer, the material of the first active layer being polysilicon; performing ion implantation at least on a region to be doped of the first active layer so as to form a doped region, the doped region being used to electrically connect with a corresponding source electrode and a corresponding drain electrode; forming a second active layer, the material of the second active layer being amorphous metal oxides; after performing ion implantation at least on the region to be doped of the first active layer and after forming the second active layer, using an activation process to activate ions implanted into the first active layer and to convert the material of the second active layer from an amorphous state to a microcrystalline state. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AU-2019318862-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11658186-B2 |
| priorityDate |
2016-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |