http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018018677-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d94573ab2c57e8b193f3a22accddf9fe |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0296 |
| filingDate | 2016-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_717218af1720ace819cdbde81fcaaec2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61f0ed4a2f86f86fb70e447b6ad02c41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4e4dafc9fd3e9c883ef3ee70f86e086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6973e1b452ff96380cf5476211c2fd9c |
| publicationDate | 2018-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2018018677-A1 |
| titleOfInvention | High-resistivity monocrystalline zno-based radiation detection device, preparation method therefor, and application thereof |
| abstract | Provided are a high-resistivity monocrystalline ZnO-based radiation detection device, a preparation method therefor, and an application thereof. The preparation method comprises the following steps: S1. preparing a high-resistivity monocrystalline ZnO chip; S2. vapor-depositing metal electrode layers on two sides of the high-resistivity monocrystalline ZnO chip; and S3. combining the chip treated in S2 onto a circuit board, and connecting the chip to the circuit board by means of a gold thread. Moreover, the device performance is tested using an α source, and the device shows an effective radiation response. According to the method, the radiation detection device is prepared using a high-resistivity ZnO material of excellent characteristics such as high irradiation resistance, wide band gap, and high breakdown electric field intensity. The obtained device is simple in structure, simple in manufacturing process, low in costs, and high in repeatability and quality, and has high practicality and a good promoting and application prospect. |
| priorityDate | 2016-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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