| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f187eb8cb31e70d4acd428dd8beedd4f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1602 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 |
| filingDate |
2017-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3b349e3d373f319b6e8bd86654e5b5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af52a265868328c1730d1afd083d5e84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1f08eba63b08d5028d17c1f7b956a64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a419f2d8be398cff9dff436bc37aff32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4eb86260f517796bc4ee673d44aaca43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9107e994a160e55542d498cadb7d10de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25dc900eea80c6da4d98e6164ed1d50d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31da6ef8e996fb38d174ff366045a840
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6bffc33f11d5f916f986ed4ad1eb95c |
| publicationDate |
2018-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018012598-A1 |
| titleOfInvention |
Semiconductor apparatus |
| abstract |
This semiconductor apparatus has an MIS structure that includes: a semiconductor layer; a gate insulating film on the semiconductor layer; and a gate electrode on the gate insulating film. The gate insulating film has a laminate structure that includes: a substrate SiO 2 layer; and a High-k layer that contains Hf located on the substrate SiO 2 layer. The gate electrode includes a section that is made of a metal material having a work function larger than 4.6 eV at least in a part in contact with the High-k layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019161079-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11695045-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7176206-B2 |
| priorityDate |
2016-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |