| abstract |
An organic semiconductor device preparation method, according to an aspect of the present invention, comprises a step for laminating an organic semiconductor solution, which comprises a hydroxyl group (M-OH, M (metal)) such as a silanol group (Si-OH), on a substrate on which a dielectric body is formed. A novel organic semiconductor device is prepared by means of the utilization as a reactor comprising a hydroxyl group (M-OH, M (metal)) such as a silanol group (Si-OH) present on a bulk and the surface of an organic semiconductor layer, and forming a self-assembled monomolecular layer showing various properties. |