| abstract |
This copper alloy bonding wire for a semiconductor device achieves improvement in the ball bond life in high temperature, high humidity environments. This semiconductor device bonding wire is characterized by containing a 0.03-3 mass% total of one or more elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir and Pt (first elements), the remainder being Cu and unavoidable impurities. By containing a prescribed amount of the first elements, the occurrence of intermetallic compounds, prone to corrosion in high temperature high humidity environments, is suppressed in the wire bonding interface, and ball bond life is improved. |