http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017213455-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10
filingDate 2017-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c63b4690ce55b5518d32eeeefb602f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fa5761ef5bd31db1acfe2d726c88beb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07377e537887070a577fc2069b9ba2ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bf05e21b0ee75f46daa30c2f97c0522
publicationDate 2017-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2017213455-A1
titleOfInvention Semiconductor device
abstract One embodiment provides a semiconductor device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and also comprises first and second recesses which pass through the active layer from the second conductive semiconductor layer and extend to the first conductive semiconductor layer; a first electrode coming into contact with the first conductive semiconductor layer from the first recess; a second electrode coming into contact with the second conductive semiconductor layer; and a reflective layer formed in the second recess, wherein the second recess has an open lower part disposed on the downside of the second conductive semiconductor layer, an upper part disposed on the first conductive semiconductor layer, and a side part extending from the lower part to the upper part, and the reflective layer comprises a reflection part disposed inside the second recess and an extension part extending from the lower part of the second recess and coming into contact with the second electrode.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017222088-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10490698-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021273134-A1
priorityDate 2016-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120103270-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130106675-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14784
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25199601
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524278
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454108060
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57454248
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452010600
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449871035
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448657308
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID408636244
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9793819
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57452119
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID157963928
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449464760
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID166598

Total number of triples: 44.