| abstract |
A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5 x 10 15 /cm 3 to 2.5 x 10 17 /cm 3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and P MAX at higher Ρ r (= I sc * V oc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased I sc , increased V oc , or both. |