http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017209858-A1

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filingDate 2017-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_582c41435f05eba489a930360bd2ad02
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publicationDate 2017-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2017209858-A1
titleOfInvention Charge mirror-based sensing for ferroelectric memory
abstract Methods, systems, and devices for a sensing scheme that extracts the full or nearly full remnant polarization charge difference between two logic states of a ferroelectric memory cell or cells is described. The scheme employs a charge mirror to extract the full charge difference between the two states of a selected memory cell. The charge mirror may transfer the memory cell polarization charge to an amplification capacitor. The signal on the amplification capacitor may then be compared with a reference voltage to detect the logic state of the memory cell.
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