http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017200621-A2
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fffda8b59ac378c0e7cd94cdf51bbfd7 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0242 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00626 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-0019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-0072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C3-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00182 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01C19-5691 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 |
filingDate | 2017-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05e087e67571684dcdba34b40c408eed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_155cd5d277a85bf4754939720b43f8cb |
publicationDate | 2017-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | WO-2017200621-A2 |
titleOfInvention | Assembly processes for three-dimensional microstructures |
abstract | Three-dimensional microstructure devices having substantially perfect alignment and leveling of a three-dimensional microstructure with respect to a substrate having a plurality of discrete electrodes and relating fabricating methods are disclosed. Seed layers are deposited onto the discrete electrodes of the substrate, and the three-dimensional microstructure is bonded adjacent to the seed layers. A substantially uniform sacrificial layer is deposited onto exposed surfaces of the three-dimensional microstructure. A plurality of first gaps exists between the seed layers and corresponding regions of the sacrificial layer. Conductive layers are deposited to fill the first gaps. The sacrificial layer is dissolved to create a second plurality of gaps between the conductive layers and the corresponding regions of the three-dimensional microstructure. The second gaps are substantially uniform. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108645397-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108645397-A |
priorityDate | 2016-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 113.