| abstract |
A preparation method for a thin film transistor array substrate, comprising: forming, on a base substrate (101), a gate electrode layer (102), a gate insulation layer (103), an oxide semiconductor layer (104), a source and drain electrode layer and a pixel electrode layer. The steps of forming the source and drain electrode layer and forming the pixel electrode layer comprise: successively forming a transparent conductive thin film (106) and a first metal thin film (107) on the oxide semiconductor layer (104), so as to form a laminated layer of the transparent conductive thin film and the first metal thin film, wherein the transparent conductive thin film (106) is in contact with the oxide semiconductor layer (104); and performing one patterning process on the laminated layer of the transparent conductive thin film (106) and the first metal thin film (107) to form a source electrode (1051), a drain electrode (1052) and a pixel electrode (108). The method can save one patterning process, shorten a production time and reduce production costs. |