| abstract |
In described examples, an integrated circuit die is fabricating to have multiple contacts. A metal post (204) is formed on each contact (207). A bump (212) is formed on a contact region (221) of a leadframe (220) or on the post (204). The bump (212) is formed with a material that includes metal nanoparticles. The integrated circuit die is attached to the leadframe (220) by aligning the metal post (204) to the leadframe (220) and sintering the metal nanoparticles in the bump (212) to form a sintered metal bond between the post (204) and corresponding contact region (221) of the leadframe (220). |