| abstract |
A method for manufacturing a TFT substrate, and a manufactured TFT substrate. By using the characteristics of high transmittance for visible light exhibited by a transparent metal oxide conductive material, and by using a processing approach to obtain a transparent metal oxide conductor by doping a transparent metal oxide semiconductor, the method for manufacturing the TFT substrate forms an active layer (70) and a pixel electrode (80) simultaneously so as to achieve the results of reducing the number of photomasks, improving production efficiency and reducing production costs. Furthermore, by means of using only one semi-transparent mask (15) for exposure, forming a common electrode (22) by means of etching as well as a stacked light-shielding layer composed by a light-shielding layer (30) and a transparent conductive layer (21), the number of photomasks can be further reduced; providing a light-shielding layer below the TFT prevents light irradiation from impacting the electrical stability of the TFT. The TFT substrate provided according to the present disclosure has simple manufacturing procedure, low production costs, and a light-shielding layer provided below TFT, which avoids impact of light irradiation on the electrical stability of the TFT. |