| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21Y2115-30 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21K9-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21K9-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F21V19-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-18 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F21V9-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F21K9-64 |
| filingDate |
2017-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4d5cbbdfd1a0b88a5f845c817e426e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bafd7c82b6fd1dd34adeef3e9b16c34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4af9b9b5543ccc5ccfbd0bcb7f7b034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e58aab8bd71b134bd40b448f9abcc5a |
| publicationDate |
2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2017157844-A1 |
| titleOfInvention |
Semiconductor light source |
| abstract |
In one embodiment, the semiconductor light source (1) comprises a semiconductor laser (2) for generating a primary radiation (P) and a conversion element (3) for generating a visible secondary radiation (S) of a longer wavelength from the primary radiation (P). The conversion element (3) has a semiconductor layer sequence (30) with a plurality of quantum well layers (31) for generating the secondary radiation (S). The quantum well layers (31) are preferably three-dimensionally formed, such that the quantum well layers (31) have bends in a cross-sectional view and are oriented at least in some regions obliquely to a growth direction (G) of the semiconductor layer sequence (30). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10884268-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3886186-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11106059-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018122774-A1 |
| priorityDate |
2016-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |