http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017155294-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 |
| filingDate | 2017-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_076c17d8034c11ea1a5cc267eb86d313 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bf05e21b0ee75f46daa30c2f97c0522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07377e537887070a577fc2069b9ba2ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fa5761ef5bd31db1acfe2d726c88beb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c63b4690ce55b5518d32eeeefb602f9 |
| publicationDate | 2017-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2017155294-A1 |
| titleOfInvention | Light emitting device |
| abstract | An embodiment of the present invention relates to a light emitting device capable of enhancing ohmic characteristics of a semiconductor layer and an electrode and simultaneously improving driving voltage, comprising: a support substrate; a light emitting structure which is disposed on the support substrate and comprises a first semiconductor layer, a second semiconductor layer and an active layer disposed between the first semiconductor layer and the second semiconductor layer; at least one groove which exposes the first semiconductor layer through the second semiconductor layer and the active layer; a first electrode which is disposed between the light emitting structure and the support substrate and electrically connected to the exposed first semiconductor layer; a second electrode which comprises ITO and contacts the second semiconductor layer; and a capping layer which is electrically connected, between the first electrode and the light emitting structure, to the second electrode, wherein the capping layer comprises a first layer, which is disposed facing the second semiconductor layer, with the second electrode interposed therebetween and comprises a material having a thermal expansion coefficient different from the thermal expansion coefficient of the second semiconductor layer by 3 or less. |
| priorityDate | 2016-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.