| abstract |
Provided is an oxide semiconductor thin film for which only carrier concentration has been reduced while maintaining a high carrier mobility, as well as a manufacturing method therefor. Provided is an amorphous oxide semiconductor thin film that includes indium and gallium as oxides, further includes hydrogen, has a gallium content such that the molecular ratio Ga/(In+Ga) is 0.15 to 0.55, and has a hydrogen content as measured by secondary ion mass spectrometry of 1.0×1020 atoms/cm3 to 1.0×1022 atoms/cm3. |