| abstract |
Provided are a compound semiconductor substrate, a pellicle film, and a method for manufacturing a compound semiconductor substrate with which it is possible to reduce the film thickness of an SiC film. This method for manufacturing a compound semiconductor substrate is provided with a step for forming an SiC film on the upper surface of an Si substrate, and a step for exposing at least part of the lower surface of the SiC film by wet etching. In the step for exposing at least part of the lower surface of the SiC film, at least the Si substrate and the SiC film are caused to move relative to a chemical solution used in the wet etching. |