| abstract |
A thin film transistor substrate according to an embodiment may comprise: a substrate; and a thin film transistor including a channel layer disposed on the substrate and including a nitride-based semiconductor layer, a source electrode electrically connected to a first region of the channel layer, a drain electrode electrically connected to a second region of the channel layer, a gate electrode disposed on the channel layer, and a depletion forming layer disposed between the channel layer and the gate electrode. |