http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017117225-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82a9e22a923eca64a02a97f0dfb493ed |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate | 2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4752079ee4e5886e5ea49e3be627a4a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ac3be19473dbdf54f13d43fc32803da |
| publicationDate | 2017-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2017117225-A1 |
| titleOfInvention | Semiconductor devices with wider field gates for reduced gate resistance |
| abstract | Semiconductor devices with wider field gates for reduced gate resistance are disclosed. In one aspect, a semiconductor device is provided that employs a gate. The gate is a conductive line disposed above the semiconductor device to form transistors corresponding to active semiconductor regions. Each active semiconductor region has a corresponding channel region. Portions of the gate disposed over each channel region are active gates, and portions not disposed over the channel region, but that are disposed over field oxide regions, are field gates. A voltage differential between each active gate and a source of each corresponding transistor causes current flow in a channel region when the voltage differential exceeds a threshold voltage. The width of each field gate is a larger width than each active gate. The larger width of the field gates results in reduced gate resistance compared to devices with narrower field gates. |
| priorityDate | 2015-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.