| abstract |
Substrates, assemblies, and techniques for enabling a stackable switching device are disclosed herein. For example, in some embodiments, a device may include a source, a drain, and a reaction layer located between the source and the drain. The source, the drain, and the reaction layer can be on top of a support substrate such as a semiconductor substrate and a contact area can modulate the resistance of the reaction layer. In an example, the contact area is a Schottky contact area and the reaction layer is a resistive switching layer. |