http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017106213-A1

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filingDate 2016-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7d977c59c05016b5376d45f27b3072b
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publicationDate 2017-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2017106213-A1
titleOfInvention Solar cell fabrication using laser patterning of ion-implanted etch-resistant layers and the resulting solar cells
abstract Solar cell fabrication using laser patterning of ion-implanted etch-resistant layers, and the resulting solar cells, are described. In an example, a back contact solar cell includes an N-type single crystalline silicon substrate having a light-receiving surface and a back surface. Alternating continuous N-type emitter regions and segmented P-type emitter regions are disposed on the back surface of the N-type single crystalline silicon substrate, with gaps between segments of the segmented P-type emitter regions. Trenches are included in the N-type single crystalline silicon substrate between the alternating continuous N-type emitter regions and segmented P-type emitter regions and in locations of the gaps between segments of the segmented P-type emitter regions.
priorityDate 2015-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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