| abstract |
A resist-pattern formation method according to the present invention includes a resist-layer formation step, a pattern exposure step, a flood exposure step, and a development step. In the resist-layer formation step, a resist layer is formed on a substrate. In the pattern exposure step, a sensitizer is generated from a sensitizer precursor in the resist layer. In the flood exposure step, the resist layer in which the sensitizer has been generated is subjected to flood exposure, whereby an acid is generated from a strong-acid generating agent. In the development step, the resist layer is developed. In the pattern exposure step, a strong acid is generated from a strong-acid generating agent, a sensitizer is generated through a reaction between the strong acid and the sensitizer precursor, a weak acid is generated through a reaction between the strong acid and a base, and a sensitizer is generated through a reaction between the weak acid and the sensitizer precursor. |