| abstract |
The invention relates to a semiconductor laser assembly (10) comprising electrically pumped active zones (31, 32, 33). The active zones (31, 32, 33) are designed to produce laser radiation (R) having emission wavelengths (L1, L2, L3) differing from each other during operation. The production of the laser radiation (R) is accomplished by the recombination of charge carriers in a semiconductor material on which the active zones (31, 32, 33) are based. Furthermore, the semiconductor laser assembly (1) contains a waveguide structure (4). The active zones (31, 32, 33) can be operated electrically independently of each other and are arranged in decreasing order with regard to the emission wavelengths (L1, L2, L3) thereof in a radiation direction (x). The laser radiation (R) of all the active zones (31, 32, 33) jointly passes through the waveguide structure (4) in the region of the active zone (33) that is last in the radiation direction (x). |