| abstract |
A eutectic electrode structure of an LED flip chip, and LED flip chip, comprising: a substrate (200); a first semiconductor layer (201); a second semiconductor layer (203), wherein a first localized imperfection region is located on a portion of the second semiconductor layer (203) and extends downward to the first semiconductor layer (201); a first metal layer (206) located on a portion of the first semiconductor layer (201); a second metal layer (205) located on a portion of the second semiconductor layer (203); an insulation layer (207) covering the first metal layer (206), the second metal layer (205), the second semiconductor layer (203), and the first semiconductor layer (201) at the localized imperfection region, and having opening structures respectively located at the first metal layer (206) and the second metal layer (205); and a eutectic electrode structure located at the insulation layer (207) having the openings, wherein the eutectic electrode structure is formed by first eutectic layers (2081, 2091) and second eutectic layers (2082, 2092) from bottom to top in a vertical direction, and is divided into a first type of electrode region (209) and a second type of electrode region (208) in a horizontal direction. The technical solution addresses the problem of packaging defects due to a high rate of eutectic void formation likely to occur during a eutectic bonding process of conventional LED flip chips. |