| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1755eede76ea7e719a3e0d2843cd793 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B5-14 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00 |
| filingDate |
2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b586d2e9a98a973fe97a702a27a31d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71856a430b2ce75b0e2dfee5c29e80fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4567fa4bea2dc906b8c2f765feb5c16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5755d44fa9e30aed2f728b8f76d1395f |
| publicationDate |
2017-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2017057556-A1 |
| titleOfInvention |
Light-transmissive conductive film and manufacturing method for annealed light-transmissive conductive film |
| abstract |
Provided is a light-transmissive conductive film that can have a low resistance value even if the light-transmissive conductive film is subjected to annealing in a short time. The light-transmissive conductive film according to the present invention is provided with: a conductive layer having light transmission property and conductivity; and a substrate disposed on one surface side of the conductive layer. The conductive layer is an amorphous layer of an indium tin oxide. Of the total content 100 wt% of In atoms and Sn atoms in the conductive layer, the content of Sn atoms is 7 wt% or more. The carrier density in the conductive layer is 4×10 20 /cm 3 to 6×10 20 /cm 3 . The hole mobility in the conductive layer is 20cm 2 /V·s to 28cm 2 /V·s. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7198097-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7198096-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10720264-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018207622-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017092033-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019033088-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102518569-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020123476-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020123475-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019122784-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7039506-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3895888-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019123243-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023042844-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018081928-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020122150-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020136147-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019029335-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200003806-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019025915-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020095814-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110637343-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020136148-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110637343-A |
| priorityDate |
2015-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |