| abstract |
The present invention relates to a negative photoresist composition for a KrF laser for forming semiconductor patterns and, more specifically, provides a negative photoresist composition for a KrF laser, the composition, which is suitable to be applied to a semiconductor process, including a specific compound in order to improve a property of a conventional negative photoresist, thereby having high transparency even in a short-wavelength exposure light source, compared to that of the conventional negative photoresist, and simultaneously having a high resolution and an excellent profile. |